The George Washington University
School of Engineering and Applied Science
Department of Electrical and Computer Engineering
ECE 20 - Summer 2000
Experiment # 4
Bipolar Junction Transistors
Testing & Characteristic
Equipment:
You must make up a complete equipment
list and have your instructor review it before you start.
Components:
-
Q1 - 2N3904 NPN Transistor
-
R1 - 100 KW
Objectives:
-
To use an ohm meter to determine the forward
and reverse resistance of transistor pn junctions
-
To use the diode test function of the Keithley
Model 175 to measure transistor pn junction characteristics
-
To obtain several transistor characteristic
curves by plotting the information taken from a transistor test circuit
-
To obtain the IV Characteristic Curves
for a transistor by using a Tektronix Model 571 Curve Tracer
-
To determine the h parameters (hie,
hre, hfe and hoe) of a Transistor
-
To verify manufacturer specifications
1.-
(HW) Transistor specifications, ratings and symbols
Refer to the specifications for the
2N3904 and find the following information:
-
transistor type
-
maximum power it can dissipate at 250
Celcius
-
maximum collector current rating
-
maximum collector to emitter voltage rating
-
operating temperature range
-
minimum and maximum hfe
-
the emitter to base breakdown voltage
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hie @ IC = 5 mA
-
hfe @ IC = 5 mA
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hoe @ IC = 5 mA
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hre @ IC = 5 mA
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VBE @ VCE = 1.0 V
and IC = 5 mA
-
Place all this information in Data Table
A - 2N3904 Specifications & Ratings.
-
Identify the base, collector and emitter
pins of the 2N3904. Draw a pin out diagram of this device and call it Figure
A - Pin Out Diagram of 2N3904.
-
Draw and label the electrical symbols for
a NPN and PNP transistor. Place this information in Figure B - Types
of Transistors & Their Electrical Symbols.
2.- Static Measurements
-
(HW)
From experiment #1, what would you think the forward-biased Resistance
values are for base-emitter junction and the base-collector junction
of Q1 ? Explain how do you get that values from.
-
Set the ohm meter to the 200 kW
scale. Measure and record the forward bias resistance of the base-emitter
junction and the base-collector junction in Q1. Set the ohm
meter to its highest scale and measure and record the reverse bias resistance
of both junctions in Q1. Place this information in Data Table
B - 2N3904 Characteristics.
-
(HW)
Explain what the Keithley Model 175 diode test would indicate if either
the base-emitter or base-collector pn junctions were working properly.
-
Test both pn junctions of Q1
with the diode test function of the Keithley Model 175. Measure and record
the forward and reverse biased readings of Q1 of both of these
junctions. Include this information in Data Table B.
3.- (HW)
IB vs VBE for different values of VCE
with ORCAD
Plot IB vs VBE
for different values of VCE. This plot is a SPICE parametric
DC sweep. The ranges for IB and VBE are 50 mA
and 1Volt. VCE should vary from 0 to 10 Volts with 1 Volt increments.
Label this plot "Plot A - ORCAD IB vs VBE".
4.- IB vs VBE
Measurements Using a Test Circuit
Fig # 1
Assemble the circuit shown in Figure
# 1.
a) Set VCE = 1 VDC
and vary IB from 5 to 50 mA
in steps of 5 mA
and record the values of IB and VBE for each
step.
b) Set VCE = 10 VDC
and once again vary IB from 5 to 50 mA
in steps of 5 mA
and record the value of IB and VBE for each
step.
Place all this information in Data
Table # 1 - Base Characteristics. Plot IB vs. VBE
in Graph # 1 - 2N3904 Base Characteristics (be sure to annotate
the VCE lines for VCE = 1V and VCE = 10V).
5.- (HW)
IC vs VCE for different values of IB with
ORCAD
-
Plot IC vs VCE for
different values of IB. This plot is a SPICE parametric DC sweep.
The ranges for IC and VCE are 10 mA and 10 Volts.
IB should vary from 0 to 50 mA
with 5 mA
increments. Label this plot "Plot B- ORCAD IC vs VCE".
-
Repeat part a) but for the value of b
equal to 10. Why there is a difference in the graph when you change b
value?
Hint: To change b
value, you have to get into the NS3904 SPICE library file,change the value
and save the file.
6.- IC vs VCE
Measurements Using a Test Circuit
Using circuit of Figure #1:
a) Set IB = 20 mA
and vary VCE from 0 to 2 VDC in 0.2 VDC
steps. Then vary VCE from 2 VDC to 10 VDC
in 2.0 VDC steps. Record the value of IC
and VCE for each step.
b) Set IB = 40 mA
and vary VCE from 0 to 2 VDC in 0.2 VDC
steps. Then vary VCE from 2 VDC to 10 VDC
in 2.0 VDC steps.
record the value of IC
and VCE for each step.
Place all this information in Data
Table # 2 - IV Characteristic Data. Plot IC vs. VCE
in Graph # 2 - 2N3904 Characteristic Curves (be sure to annotate
the IB lines for IB = 20 mA
and IB = 40 mA).
7.- IC
vs VCE Measurements Using a Curve Tracer
Obtain a copy of a family of 10 curves
for the 2N3904 from the Tektronix Model 571 Curve tracer. Set IC
to be no greater than 10 mA, VCE to be no greater than 10 V
and IB to step 10 times in 5 mA
steps (be sure to annotate the IB lines). Label this plot
as "Plot C - IC vs VCE Measurements Using a Curve
Tracer"
8.- Data Analysis
-
Determine hie, hre,
hfe, and hoe when VCE = 5V and IC
= 5 mA from Graph #1 and Graph #2.
Hint: Use the handout that will
be given in class to find those values.
-
Compare your results to the manufacture’s
specifications.
-
Determine the values of gm,
rp,
re, and ro in terms of the h parameters.
-
Determine the values of gm,
rp,
and re from the following formulas:
gm= IC / VT
rp=
VT / IB
re= VT / IE
-
Compare the values obtaine in c) and d)