The George Washington University
School of Engineering and Applied Science
Department of Electrical and Computer Engineering
ECE 20 - Summer 2000
Experiment # 1
Solid State Diodes
Testing & Characteristics
Equipment:
You must make up a complete equipment
list and have your instructor review it before you start.
Components:
-
D1 - 1N34 Germanium Diode
-
D2 - 1N4002 Series Silicon Diode
-
DS1 - MV5753 Gallium Arsenide Phosphide
(GaAsP) Red LED
-
VR1 - 1N751 Zener Diode
-
R1 - 1 Ohm
-
R2 - 1 MOhm
-
C1 - to be determined (large)
Objectives:
-
To use an ohm meter to determine the
forward and reverse resistance of different types of diodes
-
To use the Diode Test function of the
Keithley Model 175
-
To obtain one diode i-v characteristic
curve by using the information obtained from a test circuit
-
To obtain the i-v forward bias characteristic
curves for several types of diodes by using a the Tektronix Model 571
-
To obtain the i-v reverse bias characteristic
curve for a Zener diode
-
To determine the value of the small
signal resistance of one diode for different operating points and using
three different techniques: graphically, analytically and by the application
of a small signal.
-
To appreciate the limitations of the
small signal analysis technique
-
To interpret the results of static and
dynamic diode tests
1.- Data & Static Diode
Tests
-
(HW)
Draw and name the electrical symbols for D1, D2, VR1 and DS1. Prepare Table
# 1 to show technical information for the different diodes.
-
Set the ohm meter to the appropriate
range, measure and record the forward direction resistance (Rf)
of D1, D2, VR1 and DS1. Then set the ohm meter to its highest scale, measure
and record the reverse direction resistance (Rr) of D1, D2, VR1
and DS1. Calculate the back to front ratio (Rr/Rf) for D1, D2, VR1
and DS1. Place this information in Data Table #2.
-
Set the Keithley Model 175 to perform
the diode test function. Measure and record the forward and reverse
bias voltage readings for D1, D2, VR1 and DS1. Place this information also
in Data Table #2.
2.- Reverse Saturation Current
Fig # 1
Construct the circuit depicted in
Fig # 1 using the following specifications:
VS = -10 Vdc
R = R2
D = D2
The Anode of D2 should be connected
to R.
-
Find the reverse saturation current
IS of the diode. The DMM must be connected in such a manner that its loading
effect is reduced to a minimum.
-
(HW)
What is the value of IS that SPICE uses to model this diode?
3 .- Forward i-v Characteristic
Fig # 2
-
(HW) With the help of SPICE (ORCAD),
plot the i-v characteristic for the D1N4002. The suggested current range
is 0 to 20 mA DC. The suggested voltage range is 0 to 1 Volts DC.
Label this plot as Plot # 1.
-
Assemble the circuit shown in Fig #
2. Take enough current voltage measurements to plot an i-v characteristic
curve for D2 (Plot 2). You will have to vary Is in order to do this.
The suggested current range is 0 to 20 mA DC in 2 mA steps.Mark the point
on the i-v curve that indicates the voltage drop across D2 when the forward
current is equal to 10 mA DC.
-
In the forward region the i-v relationship
is closely approximated by:
i = IS(exp(v/nVT)-1)
------ (equation 1)
Determine the values of n
and IS for this equation to predict the same voltage values as those
measured in part b) for i =6 mA and i =14 mA.
-
With the help of QUATRO or EXCEL, plot
the i-v characteristics using n and IS values predicted by equation
1. Label this as Plot 3.
-
Compare the value of IS obtained in
part 3 c) with the value obtained in part 2.
4.- Diode Parameters on the Curve Tracer
-
Use the Tektronix Model 571 Curve Tracer to obtain the i-v
forward bias characteristic
curves for D1, D2, VR1 and DS1. Annotate the10mA point on each curve
(cut-in or cut-off point), and the point for which the voltage is equal
to the value measured using the Keithley 175 diode test function.
Make sure that you label the each printouts according to the diode type.
For example for D1, label the printout as "I-V Forward Characteristics
of D1".
-
Use the Tektronix Model 571 Curve Tracer to obtain the i-v
reversed bias characteristic
curves for D1, D2, VR1 and DS1. On the curve for VR1 find VZ when IZ is
equal to 20 mA. Choose the appropriate range voltage and current
range. Make sure that you label the each printouts according to the
diode type. For example for D1, label the printout as "I-V Reversed
Characteristics of D1".
-
Compare the results generated by your test circuit to the results generated
by the curve tracer for D2 ONLY and explain all differences!
5.- Conclusion
-
Compute rd analytically for ID=6 mA,
and for ID=14 mA using rd=dvD/diD=(nVT)/ID. You have already estimated
the value of nVT previously.
-
Compute the small signal resistance
for D2 graphically for for ID=14 mA, and for ID=6 mA using rd=DvD/DiD and
Plot # 2.
6. Small Signal Analysis (Extra Credit)
Fig # 3
Build the circuit shown in Fig #
3. R=R1 (1 W) and C=C1 (as large as possible)
-
Set ID=14 mA, vs=15 mV rms, (100kHz
sinusoidal signal), and measure va (or vs) and vb (or vd). Compute the
small signal resistance of the diode for this operating point: rd = vd
/ id