The George Washington University
 School of Engineering and Applied Science
 Department of Electrical and Computer Engineering
 ECE 20 - Spring 2003
Experiment # 4

Bipolar Junction Transistors
Testing & Characteristic







Equipment:
You must make up a complete equipment list and have your instructor review it before you start.
 

Components:


Objectives:


 
 
 

1.-  (HW) Transistor specifications, ratings and symbols

Refer to the specifications for the 2N3904 and find the following information.  The specification (in PDF format) can be accessed HERE.

  1. transistor type
  2. maximum power it can dissipate at 250 Celcius
  3. maximum collector current rating
  4. maximum collector to emitter voltage rating
  5. operating temperature range
  6. minimum and maximum hfe
  7. the emitter to base breakdown voltage
  8. hie @ IC = 5 mA
  9. hfe @ IC = 5 mA
  10. hoe @ IC = 5 mA
  11. hre @ IC = 5 mA
  12. VBE @ VCE = 1.0 V and IC = 5 mA


 


 
 

2.-  Static Measurements

  1. (HW) From experiment #1, what would you think the forward-biased Resistance values are for base-emitter junction and the base-collector junction of Q1 ?


 

  1. Set the ohm meter to the 200 kW scale. Measure and record the forward bias resistance of the base-emitter junction and the base-collector junction in Q1. Set the ohm meter to its highest scale and measure and record the reverse bias resistance of both junctions in Q1. Place this information in Data Table B - 2N3904 Characteristics.


 

  1. (HW)How do you make sure that the base-emitter or base-collector pn junctions were working properly using Keithley Model 175.


 

  1. Test both pn junctions of Q1 with the diode test function of the Keithley Model 175. Measure and record the forward and reverse biased readings of Q1 of both of these junctions. Include this information also in Data Table B.


 


 
 

3.- (HW) IB vs VBE for different values of VCE with ORCAD

Plot IB vs VBE for different values of VCE. Use Figure #1 for the circuit.  This plot is a SPICE parametric DC sweep. The ranges for IB and VBE are 50 mA and 1Volt. VCE should vary from 0 to 10 Volts with 1 Volt increments. Label this plot "Plot A - ORCAD IB vs VBE".
Hint: NS3904 can be obtained from "bipolar.olb" library in ORCAD.  You must do DC sweep with primary sweep varying VBE and secondary Sweep varying VCE.  IB should be in y axis.
 
 
 
 

4.-  IB vs VBE Measurements Using a Test Circuit


Fig # 1

Assemble the circuit shown in Figure # 1.
a)  Set VCE = 1 VDC and vary IB from 5 to 50 mA in steps of 5 mA and record the values of IB and VBE  for each step.

b)  Set VCE = 10 VDC and once again vary IB from 5 to 50 mA in steps of 5 mA and record the value of  IB and VBE for each step.

Place all this information in Data Table # 1 - Base Characteristics. Plot IB vs. VBE in Graph # 1 - 2N3904 Base Characteristics (be sure to annotate the VCE lines for VCE = 1V and VCE = 10V).
 
 
 

5.- (HW) IC vs VCE for different values of IB with ORCAD

  1. Plot IC vs VCE for different values of IB. Use Figure #1 for the circuit.  This plot is a SPICE parametric DC sweep. The ranges for IC and VCE are 10 mA and 10 Volts. IB should vary from 0 to 50 mA with 5 mA increments. Label this plot "Plot B- ORCAD IC vs VCE".


 

  1. Repeat part a) but for the value of b equal to 10. Why there is a difference in the graph when you change b value?


 

 

Hint: To change b value, follow these steps:
1.  Highlight NS3904 in the circuit
2.  Click on Edit
3.  Click on PSpice Model.
4.  b is called "BF" in the model.
5.  Change the BF value to 10

Hint: NS3904 can be obtained from "bipolar.olb" library in ORCAD.  You must do DC sweep with primary sweep varying VCE and secondary Sweep varying VBE.  IC should be in y axis.
 
 

6.-  IC vs VCE Measurements Using a Test Circuit

Using circuit of Figure #1:
a)  Set IB = 20 mA and vary VCE from 0 to 2 VDC in 0.2 VDC steps. Then vary VCE from 2 VDC to 10 VDC in 2.0 VDC steps.   Record the value of  IC and VCE for each step.

b)  Set IB = 40 mA and vary VCE from 0 to 2 VDC in 0.2 VDC steps. Then vary VCE from 2 VDC to 10 VDC in 2.0 VDC steps.
record the value of  IC and VCE for each step.

Place all this information in Data Table # 2 - IV Characteristic Data. Plot IC vs. VCE in Graph # 2 - 2N3904 Characteristic Curves (be sure to annotate the IB lines for IB = 20 mA and IB = 40 mA).
 
 
 

7.-   IC vs VCE Measurements Using a Curve Tracer

Obtain a copy of a family of 10 curves for the 2N3904 from the Tektronix Model 571 Curve tracer. Set IC to be no greater than 10 mA, VCE to be no greater than 10 V and IB to step 10 times in 5 mA steps (be sure to annotate the IB lines).  Label this plot as "Plot C - IC vs VCE Measurements Using a Curve Tracer"
 
 
 

8.- Data Analysis

  1. Determine hie, hre, hfe, and hoe when VCE = 5V and IC = 5 mA from Graph #1 and Graph #2.


Hint:  Use the handout that will be given in class to find those values.

  1. Compare your results to the manufacture’s specifications.
  2. Determine the values of gm, rp, re, and ro in terms of the h parameters.
  3. Determine the values of gm, rp, and re from the following formulas:

gm= IC / VT
rp= VT / IB
re= VT / IE

  1. Compare the values obtained in c) and d)