The George Washington University
 School of Engineering and Applied Science
 Department of Electrical and Computer Engineering
 ECE 20 - LAB
Experiment # 4

Bipolar Junction Transistors
Testing & Characteristic


 
 


Equipment:
You must make up a complete equipment list and have your instructor review it before you start.
 

Components:


Objectives:


 
 
 

1.-  (HW) Transistor specifications, ratings and symbols

Refer to the specifications for the 2N3904 and find the following information:

  1. transistor type
  2. maximum power it can dissipate at 250C
  3. maximum collector current rating
  4. maximum collector to emitter voltage rating
  5. operating temperature range
  6. minimum and maximum hfe
  7. the emitter to base breakdown voltage
  8. hie @ IC = 5 mA
  9. hfe @ IC = 5 mA
  10. hoe @ IC = 5 mA
  11. hre @ IC = 5 mA
  12. VBE @ VCE = 1.0 V and IC = 5 mA

  13.  

 
 

2.-  Static Measurements

  1. Set the ohm meter to the 200 kW scale. Measure and record the forward bias resistance of the base-emitter junction and the base-collector junction in Q1. Set the ohm meter to its highest scale and measure and record the reverse bias resistance of both junctions in Q1. Place this information in Data Table B - 2N3904 Characteristics.

  2.  
  3. Test both pn junctions of Q1 with the diode test feature found on the Keithley Model 175. Measure and record the forward and reverse biased readings of Q1 of both of these junctions. Include this information in Data Table B.

  4.  
  5. (HW) Explain what your tests would indicate if either the base-emitter or base-collector pn junctions were good, open or shorted.

 
 

3.- (HW) IB vs VBE for different values of VCE with SPICE

Plot IB vs VBE for different values of VCE. This plot is a SPICE parametric DC sweep. The ranges for IB and VBE are 50 mA and 1Volt. VCE should vary from 0 to 10 Volts with 1 Volt increments. Label this plot "Plot A".
 
 
 
 

4.-  IB vs VBE Measurements Using a Test Circuit


Fig # 1

Assemble the circuit shown in Figure # 1. Set VCE = 1 VDC and vary IB from 5 to 50 mA in steps of 5 mA and record the value of VBE for each step. Set VCE = 10 VDC and once again vary IB from 5 to 50 mA in steps of 5 mA and record the value of VBE for each step. Place all this information in Data Table # 1 - Base Characteristics. Plot IB vs. VBE in Graph # 1 - 2N3904 Base Characteristics (be sure to annotate the VCE lines).
 
 
 

5.- (HW) IC vs VCE for different values of IB with SPICE

  1. Plot IC vs VCE for different values of IB. This plot is a SPICE parametric DC sweep. The ranges for IC and VCE are 10 mA and 10 Volts. IB should vary from 0 to 50 mA with 5 mA increments. Label this plot "Plot B".

  2.  
  3. Repeat part a) but for the value of b equal to 10. Compare your results with those obtained in a).

 
 

6.-  IC vs VCE Measurements Using a Test Circuit

Set IB = 20 mA and vary VCE from 0 to 2 VDC in 0.2 VDC steps then step VCE from 2 VDC to 10 VDC in 2.0 VDC steps. Set IB = 40 mA and once again vary VCE from 0 to 2 VDC in 0.2 VDC steps then step VCE from 2 VDC to 10 VDC in 2.0 VDC steps. Place all this information in Data Table # 2 - IV Characteristic Data. Plot IC vs. VCE in Graph # 2 - 2N3904 Characteristic Curves (be sure to annotate the IB lines).
 
 
 

7.-   IC vs VCE Measurements Using a Curve Tracer

Obtain a copy of a family of 10 curves for the 2N3904 from the Tektronix Model 571 Curve tracer. Set IC to be no greater than 10 mA, VCE to be no greater than 10 V and IB to step 10 times in 5 mA steps (be sure to annotate the IB lines).
 
 
 

8.- (HW) Data Analysis

  1. Interpret and review all the data that you have taken.
  2. Determine hie, hre, hfe, and hoe when VCE = 5V and IC = 5 mA from plots A and B.
  3. Compare your results to the manufacture’s specifications.
  4. Determine the values of gm, rp, re, and ro in terms of the h parameters.
  5. Determine the values of gm, rp, and re from the following formulas:
gm= IC / VT
rp= VT / IB
re= VT / IE
  1. Compare the values obtaine in d) and e)