The George Washington University
School of Engineering and Applied Science
Department of Electrical and Computer Engineering
ECE 20 - LAB
Experiment # 4
Bipolar Junction Transistors
Testing & Characteristic
Equipment:
You must make up a complete equipment
list and have your instructor review it before you start.
Components:
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Q1 - 2N3904 NPN Transistor
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R1 - 100 KW
Objectives:
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To use an ohm meter to determine the forward
and reverse resistance of transistor pn junctions
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To use the diode test function of the Keithley
Model 175 to measure transistor pn junction characteristics
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To obtain several transistor characteristic
curves by plotting the information taken from a transistor test circuit
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To obtain the IV Characteristic Curves
for a transistor by using a Tektronix Model 571 Curve Tracer
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To determine the h parameters (hie,
hre, hfe and hoe) of a Transistor
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To verify manufacturer specifications
1.- (HW) Transistor
specifications, ratings and symbols
Refer to the specifications for the
2N3904 and find the following information:
-
transistor type
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maximum power it can dissipate at 250C
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maximum collector current rating
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maximum collector to emitter voltage rating
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operating temperature range
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minimum and maximum hfe
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the emitter to base breakdown voltage
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hie @ IC = 5 mA
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hfe @ IC = 5 mA
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hoe @ IC = 5 mA
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hre @ IC = 5 mA
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VBE @ VCE = 1.0 V
and IC = 5 mA
-
Place all this information in Data Table
A - 2N3904 Specifications & Ratings.
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Identify the base, collector and emitter
pins of the 2N3904. Draw a pin out diagram of this device and call it Figure
A - Pin Out Diagram of 2N3904.
-
Draw and label the electrical symbols for
a NPN and PNP transistor. Place this information in Figure B - Types of
Transistors & Their Electrical Symbols.
2.- Static Measurements
-
Set the ohm meter to the 200 kW
scale. Measure and record the forward bias resistance of the base-emitter
junction and the base-collector junction in Q1. Set the ohm
meter to its highest scale and measure and record the reverse bias resistance
of both junctions in Q1. Place this information in Data Table
B - 2N3904 Characteristics.
-
Test both pn junctions of Q1
with the diode test feature found on the Keithley Model 175. Measure and
record the forward and reverse biased readings of Q1 of both
of these junctions. Include this information in Data Table B.
-
(HW) Explain what your tests would
indicate if either the base-emitter or base-collector pn junctions were
good, open or shorted.
3.- (HW) IB vs VBE
for different values of VCE with SPICE
Plot IB vs VBE
for different values of VCE. This plot is a SPICE parametric
DC sweep. The ranges for IB and VBE are 50 mA
and 1Volt. VCE should vary from 0 to 10 Volts with 1 Volt increments.
Label this plot "Plot A".
4.- IB vs VBE
Measurements Using a Test Circuit
Fig # 1
Assemble the circuit shown in Figure
# 1. Set VCE = 1 VDC and vary IB from
5 to 50 mA
in steps of 5 mA
and record the value of VBE for each step. Set VCE
= 10 VDC and once again vary IB from 5 to 50 mA
in steps of 5 mA and record the value of VBE for each step.
Place all this information in Data Table # 1 - Base Characteristics. Plot
IB vs. VBE in Graph # 1 - 2N3904 Base Characteristics
(be sure to annotate the VCE lines).
5.- (HW) IC vs VCE
for different values of IB with SPICE
-
Plot IC vs VCE for
different values of IB. This plot is a SPICE parametric DC sweep.
The ranges for IC and VCE are 10 mA and 10 Volts.
IB should vary from 0 to 50 mA
with 5 mA
increments. Label this plot "Plot B".
-
Repeat part a) but for the value of b
equal to 10. Compare your results with those obtained in a).
6.- IC vs VCE
Measurements Using a Test Circuit
Set IB = 20 mA
and vary VCE from 0 to 2 VDC in 0.2 VDC
steps then step VCE from 2 VDC to 10 VDC
in 2.0 VDC steps. Set IB = 40 mA
and once again vary VCE from 0 to 2 VDC in 0.2 VDC
steps then step VCE from 2 VDC to 10 VDC
in 2.0 VDC steps. Place all this information in Data Table #
2 - IV Characteristic Data. Plot IC vs. VCE in Graph
# 2 - 2N3904 Characteristic Curves (be sure to annotate the IB
lines).
7.- IC
vs VCE Measurements Using a Curve Tracer
Obtain a copy of a family of 10 curves
for the 2N3904 from the Tektronix Model 571 Curve tracer. Set IC
to be no greater than 10 mA, VCE to be no greater than 10 V
and IB to step 10 times in 5 mA
steps (be sure to annotate the IB lines).
8.- (HW) Data Analysis
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Interpret and review all the data that
you have taken.
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Determine hie, hre,
hfe, and hoe when VCE = 5V and IC
= 5 mA from plots A and B.
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Compare your results to the manufacture’s
specifications.
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Determine the values of gm,
rp,
re, and ro in terms of the h parameters.
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Determine the values of gm,
rp,
and re from the following formulas:
gm= IC / VT
rp=
VT / IB
re= VT / IE
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Compare the values obtaine in d) and e)